H+ ion-induced damage and etching of multilayer graphene in H2 plasmas
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Opening of triangular hole in triangular-shaped chemical vapor deposited hexagonal boron nitride crystal
In-plane heterostructure of monolayer hexagonal boron nitride (h-BN) and graphene is of great interest for its tunable bandgap and other unique properties. Here, we reveal a H2-induced etching process to introduce triangular hole in triangular-shaped chemical vapor deposited individual h-BN crystal. In this study, we synthesized regular triangular-shaped h-BN crystals with the sizes around 2-10...
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Porous dielectrics such as SiCOH are used as the insulator in interconnect wiring in microelectronics devices to lower the dielectric constant and therefore decrease the resistive–capacitive delay. After etching a trench in low-k dielectrics in fluorocarbon plasmas, a CFx polymer remains on the sidewalls, which must be removed in a manner that does not damage the low-k material. This can be acc...
متن کاملDamage by radicals and photons during plasma cleaning of porous low-k SiOCH. I. Ar/O2 and He/H2 plasmas
Porous dielectric materials offer lower capacitances that reduce RC time delays in integrated circuits. Typical porous low dielectric (low-k) materials include SiOCH—silicon dioxide with carbon groups, principally –CH3, lining the pores. Fluorocarbon plasmas are often used to etch such low-k materials. These processes leave a fluorocarbon polymer on the SiOCH surface that must be removed, often...
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We report interactions of low pressure Ar, H2, and Ar/H2 mixture plasmas with a-C:H films. Surface evolution and erosion of a-C:H films were examined for ion energies up to 200 eV by rf biasing the substrates. Film surfaces were characterized using in situ ellipsometry, x-ray photoelectron spectroscopy, and atomic force microscopy. Multilayer models for steady-state modified surface layers are ...
متن کاملPulsed plasma etching for semiconductor manufacturing
Power-modulated (pulsed) plasmas have demonstrated several advantages compared to continuous wave (CW) plasmas. Specifically, pulsed plasmas can result in a higher etching rate, better uniformity, and less structural, electrical or radiation (e.g. vacuum ultraviolet) damage. Pulsed plasmas can also ameliorate unwanted artefacts in etched micro-features such as notching, bowing, micro-trenching ...
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تاریخ انتشار 2018